The interfaces of lanthanum oxide-based subnanometer …
For the La 2 O 3 /Al stack, the interfacial layer is aluminum oxide or lanthanum aluminates. These interface layers generally have much smaller k values (<15) than the desired high-k gate dielectric. The thickness of this transition layer may range from 0.3 to over 1 nm depending on the material and the post high-k deposition temperature. …
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Characteristics of lanthanum hafnium oxide deposited by …
Lanthanum hafnium oxide (LHO) thin films were grown using an electron cyclotron resonance atomic layer deposition technique. Tetrakis(ethylmethylamino)hafnium (TEMAHf ...
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[PDF] Solution-processed amorphous hafnium-lanthanum …
In this study, we introduce an amorphous hafnium-lanthanum oxide (HfLaOx) gate insulator with high electrical permittivity which was fabricated by the simple spin-coating method. In particular, the solution-processed HfLaOx dielectric layer, which was achieved by a mixture of two Hf and La metal hydroxide precursors, showed …
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for SFS gate-stack memory devices
This work presents an analysis of the endurance of ferroelectric capacitors fabricated with a thin lanthanum-doped hafnium oxide layer in an SFS type of structure. The thin film has been measured by GIXRD and the main crystallographic parameters have been related to the ferroelectric behavior of the samples. The effect of variation in the process conditions, …
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Subnanoscale Lanthanum Distribution in Lanthanum …
Abstract. The subnanoscale spatial distribution of La in La-incorporated HfO 2 thin films grown by atomic layer deposition (ALD) is characterized using angle resolved X-ray photoelectron spectroscopy …
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NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum
The HK layer includes a hafnium layer and a lanthanum oxide layer over the hafnium oxide layer. Lines 402, 404, 406, 408, and 410 show the concentrations of silicon, hafnium, oxygen, titanium, and lanthanum, respectively.
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Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for …
Direct growth and characterization of Hf 0.5 Zr 0.5 O 2 on Si. Most previous studies (~85%) have focused on ALD-grown HZO, which is advantageous in achieving large-area and uniform thin films.
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Characteristics of lanthanum hafnium oxide deposited by …
Dimoulas et al. demonstrated that high-quality lanthanum hafnium oxide (LHO) dielectric layers deposited by molecular beam epitaxy show promising …
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Characteristics of lanthanum hafnium oxide deposited by …
Dimoulas et al. demonstrated that high-quality lanthanum hafnium oxide (LHO) dielectric layers deposited by molecular beam epitaxy show promising thermodynamic and electrical properties. 4,5 Their LHO dielectric layers had a lattice mismatch of − 0.74 % with respect to (100) Si at room temperature.
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Thermal stability of lanthanum in hafnium-based gate …
y=0.2 or hafnium silicon oxynitride, were studied. The sili-con oxide layer was thermally grown and the Hf 1−ySi yO 2 layer was grown with atomic layer deposition.10 A thin layer 1ML monolayer ...
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Atomic layer deposition of hafnium oxide and hafnium …
Atomic layer deposition (ALD) processes for HfO 2 and Hf x Si 1−x O 2 high-k dielectric thin films using liquid precursors and ozone were evaluated. Tetrakis(ethylmethylamino)hafnium (TEMAHf) precursor provides HfO 2 films with superior quality as compared to Hf(t-butoxide) 4 precursor in terms of deposition rate, purity, and …
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Atomic Layer Deposition of Lanthanum Oxide Films for …
Lanthanum-containing oxide films are emerging candidates for gate-oxide films, due to expected high dielectric constants as well as promising crystal and electronic band structure. We have used ...
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Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
Electrode replacement processing is introduced as a route to produce ferroelectric and antiferroelectric hafnium zirconium oxide thin films with asymmetric electrode layers and customizable ...
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,QYHVWLJDWLRQRI&RQGXFWLQJ2[LGHDQG0HWDO …
Lanthanum silicate and lanthanum-hafnium silicate have been shown to be especially suited as dielectrics for nMOSFET devices (1,2). Utilizing TaN and related ... form high-K lanthanum silicate layer. MIS capacitor was then fabricated by subsequent depositions of TCO and metal (W) gate films using two chambers connected through ...
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Google Patents
US7411237B2 US11/584,229 US58422906A US7411237B2 US 7411237 B2 US7411237 B2 US 7411237B2 US 58422906 A US58422906 A US 58422906A US 7411237 B2 US7411237 B2 US 7411237B2 Authority
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Lanthanum-Doped Hafnium Oxide: A Robust …
PMID: 29446630. DOI: 10.1021/acs.inorgchem.7b03149. Recently simulation groups have reported the lanthanide series elements as the dopants that have the …
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Dual Emission of Dysprosium-Doped Hafnium Oxide …
Wang, T and John GE, "Sub nanoscale lanthanum distribution in lanthanum-incorporated hafnium oxide thin films grown using atomic layer deposition" Chem. Mater (2010) 22: 3798. Triyoso, D, Liu R, Roan D and M. Ramon, et al. "Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2" J The ...
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Lanthanum hafnium oxide dielectrics
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
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An ICP-MS Expedition Through the Elements – Part 3
With the exclusion of lanthanum and actinium, Groups 3 and 4 consist of the stable elements scandium, yttrium, titanium, zirconium and hafnium plus the radioactive element, rutherfordium. The first member of these two groups to be discovered, by the German chemist Martin Heinrich Klaproth in 1789, was zirconium.
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Thermal stability of lanthanum in hafnium-based gate …
layer was grown with atomic layer deposition. 10 A thin layer ⬃ 1M L monolayer of La 2 O 3 was deposited by molecular beam epitaxy methods on top of the Hf layer. 1, 2 After nitri-
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Thermal barrier coatings: Review
2.1. Significance of double ceramic layer (DCL) Double ceramic layer coatings with different thickness proportions made up of yttria stabilized zirconia and lanthanum zirconate (LZ, La 2 Zr 2 O 7) were produced by air plasma spray.Chemical inertness of LZ along with YSZ is researched by calcination of powder mixes at various temperatures …
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Improved ferroelectric characteristics of ALD …
A study was conducted on how the subsequent cooling time affects the ferroelectric (FE) characteristics of atomic layer deposited (ALD) lanthanum (La) doped …
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Ferroelectric and Antiferroelectric Phenomenon in Lanthanum …
Hafnium lanthanum oxide (HLO) thin film, known for their excellent ferroelectric properties, have emerged as a promising strategy for future non-volatile memory (NVM) applications.
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Wake-Up Mechanisms in Ferroelectric Lanthanum-Doped Hf
The lanthanum-doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back-end of line devices. ... A 10 nm-thick titanium adhesion layer and a 25 nm-thick platinum layer were deposited through a shadow mask …
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Investigation of lanthanum and hafnium-based dielectric …
Lanthanum and hafnium-based dielectric films have been investigated by XRR, SE and XPS analysis. Both XRR and SE have shown the beneficial effect given by a three-layer model to reproduce the surface-roughness layer, then the pure oxide, and the interfacial layer between high-κ oxide and Si substrate.
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Atomic and electronic structure of ferroelectric La-doped …
The atomic structure and optical properties of ferroelectric La-doped hafnium oxide (La:HfO 2) thin films grown by the plasma-assisted atomic layer deposition were investigated.Using high resolution transmission electron microscopy, it was shown that the studied La:HfO 2 film has a orthorhombic polar structure with the Pmn2 1 space group. It …
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Precursors For Atomic Layer Deposition Of High-k …
(M(NR2)n), such as hafnium dimethy-lamide, Hf(N(CH3)2)4 and metal amidi-nates (M(N2CR3)n), such as lanthanum N,N'-diisopropylacetamidinate, where each amidinate ligand chelates the metal center through two M-N bonds. Alkylamido precursors have relativelyweak M-N bonds and strong byproduct N-H bonds, lowering the ALD …
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Coatings | Free Full-Text | Effect of Annealing Temperature …
Lanthanum-doped HfO2 films were deposited on Si by sol–gel technology. The effects of annealing temperature on the optical properties, interface chemistry, and energy band structure of Lanthanum-doped HfO2 films have been investigated. The crystallinity and surface morphologies of the films are strongly dependent on the …
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Impact of lanthanum on the modification of HfO2 films …
Fig. 1(c) reveals that there is lanthanum and hafnium throughout the film thickness. Therefore, amorphous ternary alloys are to be formed within the No. 4 sample. In addition, a light interfacial layer adjacent to the Si sub- strate is ascertained in HR TEM micrographs, it is asso- ciated with an amorphous SiO2 or a silicate-like com- pound.
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STEM and APT characterization of scale formation on a …
A thermally grown scale formed on a cast NiCrAl model alloy doped with lanthanum, hafnium, and titanium was examined after isothermal exposure at 1100 °C for 100 h in dry flowing O 2 to understand the dopant segregation along scale grain boundaries. The complex scale formed on the alloy surface was composed of two types of substrates: …
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